| PART |
Description |
Maker |
| M58LT128HSB M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT |
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| DS1855E-010_R DS1855E-010_T DS1855E-020_R DS1855E- |
Dual Nonvolatile Digital Potentiometer and Secure Memory 双非易失数字电位器及安全存储
|
Maxim Integrated Products, Inc.
Allegro MicroSystems, Inc.
Dallas Semiconducotr
Dallas Semiconductor
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| AT88SC153-09HT-00 AT88SC153-09GT-00 AT88SC153-10WI |
3 x 64 x 8 Secure Memory with Authentication
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
3 x 64 x 8 Secure Memory with Authentication 2K X 1 I2C/2-WIRE SERIAL EEPROM, XMA8
|
ATMEL Corporation
Atmel Corp.
Atmel, Corp.
http://
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| AD5667RBCPZ-R2 AD5667RBCPZ-REEL7 AD5667RBRMZ- AD56 |
Dual, 12-/14-/16-Bit nanoDACs垄莽 with 5 ppm/隆?C On-Chip Reference, I2C垄莽 Interface
Dual, 12-/14-/16-Bit nanoDACs庐 with 5 ppm/掳C On-Chip Reference, I2C庐 Interface
Dual, 12-/14-/16-Bit nanoDACs? with 5 ppm/°C On-Chip Reference, I2C? Interface
|
Analog Devices
http://
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| NCN6004A NCN6004AFTBR2 |
Dual SAM/SIM Interface/Power Supply Circuit for Secured Access Module Reader/Writer Applications
Dual SAM/SIM Interface Integrated Circuit
|
ONSEMI[ON Semiconductor]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
